Hybrid Perovskite Nanoparticles for High-Performance Resistive Random Access Memory Devices: Control of Operational Parameters through Chloride Doping | NIIST

Hybrid Perovskite Nanoparticles for High-Performance Resistive Random Access Memory Devices: Control of Operational Parameters through Chloride Doping

Year : 2016 लेखक : Muthu, C; Agarwal, S; Vijayan, A; Hazra, P; Jinesh, KB; Nair, VC
Research Area :Chemical Sciences and Technology Journal : ADVANCED MATERIALS INTERFACES
DOI :10.1002/admi.201600092
Publication Date :04/04/2023 - 10:58